Combined study of microwave-power/linear-polarization dependence of the microwave-radiation-induced magnetoresistance oscillations in GaAs/AlGaAs devices

摘要

We report the results of a combined microwave polarization-dependence andpower-dependence study of the microwave-radiation-induced magnetoresistanceoscillations in high mobility GaAs/AlGaAs heterostructure devices at liquidhelium temperatures. The diagonal resistance was measured with the magneticfield fixed at the extrema of the radiation-induced magnetoresistanceoscillations, as the microwave power was varied at a number of microwavepolarization angles. The results indicate a nonlinear relation between theoscillatory peak or valley magnetoresistance and the microwave power, as wellas a cosine square relation between the oscillatory peak or valleymagnetoresistance and the microwave polarization angle. The main features arebriefly compared with the predictions of existing models.